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Goford Semiconductor

Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in the USA, Australia, Shenzhen, Jiangsu, and Hong Kong. We have been always devoting in the R&D and sales of the power Mosfet products. We focus on the energy efficiency, mobility, and reliability to provide cost effective products to the market. We are committed to trying our best to satisfy customers’ needs, provide the most reliable and cost effective products, innovate and do better every day, partner with engineers and customers for mutual value, and work harder to realize our commitment.

Part Number	Description	View
G12P10K	P100V,RD(MAX)<200M@-10V,RD(MAX)<	Inquiry
G1008B	N100V, 8A,RD<130M@10V,VTH1V~3V,	Inquiry
G160P03KI	P-30V,-30A,RD(MAX)<16M@-10V,VTH-	Inquiry
GT023N10T	N100V, 140A,RD<2.7M@10V,VTH2.7V~	Inquiry
GC20N65Q	N650V,RD(MAX)<170M@10V,VTH2.5V~4	Inquiry
G26P04K	P-40V,RD(MAX)<18M@-10V,RD(MAX)<2	Inquiry
G50N03J	N30V,RD(MAX)<7M@10V,RD(MAX)<12M@	Inquiry
G170P02D2	P-20V,-16A,RD(MAX)<17M@-4.5V,VTH	Inquiry
GT095N10D5	N100V,RD(MAX)<11M@10V,RD(MAX)<15	Inquiry
G2002A	N200V, 2A,RD<540M@10V,VTH1.0V~3.	Inquiry
G15P04K	P40V,RD(MAX)<39M@-10V,RD(MAX)<70	Inquiry
G12P10KE	P-100V,ESD,-12A,RD(MAX)<200M@-10	Inquiry
GT025N06AD5	N60V, 170A, RD<2.2M@10V,VTH1.2V~	Inquiry
G30N04D3	MOSFET N-CH 40V 30A DFN33-8L	Inquiry
GT6K2P10KH	MOSFET P-CH 100V 4.3A TO-252	Inquiry
G50N03K	N30V,RD(MAX)<7M@10V,RD(MAX)<12M@	Inquiry
GC20N65F	N650V,RD(MAX)<170M@10V,VTH2.5V~4	Inquiry
G230P06K	P-CH,-60V,-60A,RD(MAX)<20M@-10V,	Inquiry
G10N10A	N100V,RD(MAX)130MOHM@10V,TO-252	Inquiry
GT060N04K	MOSFET, N-CH, 40V,54A,TO-252	Inquiry
GT105N10K	MOSFET, N-CH, 100V,60A,TO-252	Inquiry
GT011N03D5E	MOSFET N-CH ESD 30V 209A DFN5*6-	Inquiry
GT100N12T	N120V,RD(MAX)<10M@10V,VTH2.5V~3.	Inquiry
G700P06D5	P-60V,-25A,RD(MAX)<70M@-10V,VTH-	Inquiry
G1K8P06S2	P-60V,-3.2A,RD(MAX)<170M@-10V,VT	Inquiry
3400L	N30V,RD(MAX)<27M@10V,RD(MAX)<33M	Inquiry
G60N10T	N100V,RD(MAX)<25M@10V,RD(MAX)<30	Inquiry
G350P02LLE	P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V	Inquiry
G1006LE	N100V,RD(MAX)<150M@10V,RD(MAX)<1	Inquiry
G2003A	N190V, 3A,RD<540M@10V,VTH1.0V~3.	Inquiry
G700P06H	P-60V,-5A,RD(MAX)<75M@-10V,VTH-1	Inquiry
G06P01E	P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4	Inquiry
G200P04D3	P-40V,-20A,RD(MAX)<75M@-10V,VTH-	Inquiry
G45P02D3	P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<	Inquiry
G700P06D3	P-60V,-18A,RD(MAX)<70M@-10V,VTH-	Inquiry
GT700P08T	P-80V, -25A,RD<72M@-10V,VTH-2V~-	Inquiry
G1007	N100V,7A,RD<110M@10V,VTH1.0V~3.0	Inquiry
G75P04KI	P-40V,-70A,RD(MAX)<6.5M@-10V,VTH	Inquiry
G4953S	P+P -30V,RD(MAX)<60M@-10V,RD(MAX	Inquiry
2002A	N190V,5A,RD<540M@10V,VTH1.0V~3.0	Inquiry
G23N06K	N60V,RD(MAX)<35M@10V,RD(MAX)<45M	Inquiry
G05NP10S	N/P 100V,5A/-6A,RD(MAX)<170M/200	Inquiry
2301H	P30V,RD(MAX)<130M@-4.5V,RD(MAX)<	Inquiry
G2K3N10H	MOSFET, N-CH,100V, 2A,SOT-223	Inquiry
G1NP02LLE	NP20V, 1.3A/-1.1A,RD<210M@4.5V,R	Inquiry
18N20F	N200V, 18A,RD<0.19@10V,VTH1.0V~3	Inquiry
G08N02L	N20V, 8A, RD<12.3M@4.5V,VTH0.5V~	Inquiry
G75P04TI	P-40V,-70A,RD(MAX)<7M@-10V,VTH-1	Inquiry
3400	N30V,RD(MAX)<27M@10V,RD(MAX)<33M	Inquiry
G18P03D3	P30V,RD(MAX)<10M@-10V,RD(MAX)<15	Inquiry

Total 308s items

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